HOT ! 山崎瞬平（共）編／酸化物半導体CAAC-IGZOの物理と技術：LSIへの応用 新着情報: 超高解像度テレビ用材料の高い電子移動度の起源を解明

新着情報: 超高解像度テレビ用材料の高い電子移動度の起源を解明。東京大ら、3次元集積可能なメモリデバイスを開発：Snを添加したIGZO。最短15分で成膜、酸化物半導体の湿式成膜技術：ZnOやCu2Oなど - EE。Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。シャープと半導体エネルギー研究所がディスプレイを革新する酸化物。This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.